Growth of silicon nanowires in aqueous solution under atmospheric pressure

Nano Research June 2014, Volume 7, Issue 6, pp 898-902 Nae-Man Park (1), Chel-Jong Choi(2) 1. Components and Materials Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-700, Republic of Korea 2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, 664-14, Deokjin-dong, Deokjin-gu, Jeonju, 561-756, Republic of Korea

A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85 °C under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.